Contact Formation on Boron Doped Silicon Substrates from Passivating Pecv- Deposited Dielectric Doping Layers with Anti-reflective Properties by Screen- Printing Ag Pastes for High-efficiency N-type Silicon Solar Cells

n-type silicon solar cell designs for high-efficiency commonly incorporate boron emitter formation. PECV-deposited boron diffusion sources are an alternative to primarily used boron gas diffusion sources. CVD layers are multi-functional allowing for diffusion of boron, surface passivation and contact formation by one single layer. In this case, these BSG layers are applied in a co-diffused cell design for screen-printed contacts. Reaching iVOC values of over 660 mV as ARC layers, BSG layers are shown to be capable to support the contact formation of commercial Ag pastes to boron emitters at standard firing conditions. An analysis of the contact resistivity as well as the contact formation by SEM is conducted to verify the high quality of the screen-printed contact.